A textured thin film of FeGe was grown by magnetron sputtering with ahelimagnetic ordering temperature of TN = 276 +/- 2 K. From 5 K to roomtemperature a variety of scattering processes contribute towards the overalllongitudinal and Hall resistivities. These were studied by combiningmagnetometry and magnetotransport measurements. The high-fieldmagnetoresistance (MR) displays three clear temperature regimes: Lorentz forceMR dominates at low temperatures, above T ~ 80 K scattering from spin-wavespredominates, whilst finally for T > 200 K scattering from fluctuating localmoments describes the MR. At low fields, where the magnetisation is no longertechnically saturated, we find a scaling of magnetoresistance with the squareof the magnetisation, indicating that the MR due to the unwinding of spins inthe conical phase arises from a similar mechanism to that in magnetic domainwalls. This MR is only visible up to a temperature of about 200 K. No featurescan be found in the temperature or field dependence of the longitudinalresistivity that belie the presence of the underlying magnetic phase transitionat TN: the marked changes in behavior are at much lower temperatures. Theanomalous Hall effect has a dramatic temperature dependence in which theanomalous Hall resistivity scales quadratically with the longitudinalresistivity: comparison with anomalous Hall scaling theory shows that oursystem is in the intrinsic 'moderately dirty' regime. Lastly, we find evidenceof a topological Hall effect of size 100 ~Ohm cm.
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